2N High-Speed,. Silicon N-P-N. TELEPHONE: () () FAX: () MAXIMUM RATINGS, Absolute-Maximum Values. 2N NPN Transistor: 50v, 4a. Details, datasheet, quote on part number: 2N Part, 2N Category, Discrete => Transistors => Bipolar => General . 2N from Solitron Devices, Inc.. Find the PDF Datasheet, Specifications and Distributor Information.
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A rectifier allows current flow in one direction only. Delay, ps min. Resolution – Precision by which the digital code represents the analog signal’s magnitude. These current feedback amplifiers deliver nearly equal bandwidth over a wide range of gains. Includes latches, interface and brightness control. Devices must be ordered in multiples of quantities listed below. High drive, to meet specified bus-interface requirements dztasheet clock and data lines 3.
Harris now offers its customers the convenient tape and reel style packaging. Harris Semiconductor Literature Department P. Rugged Series devices are identified by the suffix letter R following the type number. Clamping Voltage Vz – Off state voltage at a specified current. Largest supplier of digital dictation systems – Seventh-largest supplier of copiers in U. Slew rate may be specified separately for both positive and negative going changes.
Unidirectional – Handles positive OR negative going transient waveforms.
M CDB 4C1 1 1. Findlay, Ohio; Milpitas, California; Research Triangle Park, North Carolina; Kuala Lumpur, Malaysia Military and Aerospace Division has been an industry leader for nearly three decades in radiation-hardened rad-hard integrated circuits that provide ratasheet performance and high reliability in severe operating environments.
Analog Switch Famly M: Consult factory for availability. Pin Grid Array B: Varistor Voltage, VN dc Varistor peak terminal voltage measured with a specified current applied.
Small-Outline Plastic Package Q: Harris H SP Family: Harris provides high reliability semiconductors that are fully compliant with the following standards: Logic level Gate D: The following products offer the design engineer improved alternatives to existing solutions. Reference to products of other manufacturers are solely for convenience of comparison and do not imply total equivalency of design, performance, or otherwise.
Capacitance Typical values measured at a test frequency of 1. Small Caps Tile 6: The protection afforded rary upset due to transient voltages of lower amplitudes.
The difference between a Diode and a Rectifier is that a Rectifier is usually rated at a breakdown voltage of greater than 50 volts and has a power rating that is greater than 0. R I ifl-frl-iiLilri ifi k i? Digital channel selection includes a high Z output state for additional multiplexing. Very high speed Temperature 2: Full text of ” harris:: Search the history of over billion web pages on the Internet. Otherwise this mode generates a square wave output.
Telecom ring generator, function generator and more. The division has met or exceeded the needs of space, tactical weapons, strategic weapons, and secure communication programs since Low leakage threshold and trigger inputs allow use of higher impedance RC timing components for extra long time delay. CDB CD4 1. Standard, custom, and semicustom integrated circuits and discrete products for analog, mixed- signal and power-Control applications.
Non TX Commercial 2. Used for extremely long time delays. Leadless chip carriers LCC 4P: Custom amplifier design, bandgap circuits, translinear circuits and more. Antilog amplifier does the inverse. I ou 5. A n-p-n 8 45 min.
More energy handling capability than MOV’s per unit volume. Pins Function Type No. ID Eft 1A ft ft 1ft U. Operation at Collector Current up to 20 amps and supply voltages ranging from 40 to volts Applications: CK, CJ 2. FindLay, Ohio; Mountaintop, Pennsylvania; Somerville, New Jersey; Dundalk, Ireland; Singapore; Kuala Lumpur, Malaysia Semiconductor Products Division designs, manufactures, and markets daatsheet semiconductors and analog, digital, and mixed-signal integrated circuits for signal -processing and power-control applications for both commercial and military uses.
These are n-channel enhancement mode polysilicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor and relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
Leadless chip carrier S: